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CS1008F-751+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-820+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-820+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-821+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-821+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-911+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1008F-911+ Ceramic Chip Inductor 1008 High Q (10nH-4700nH) PREMO
CS1009 2.5 Volt Reference ONSEMI
CS1009GD8 2.5 Volt Reference ONSEMI
CS1009GDR8 2.5 Volt Reference ONSEMI
CS1009GZ3 2.5 Volt Reference ONSEMI
CS1009GZR3 2.5 Volt Reference ONSEMI
CS101 Standard Cell FUJITSU
CS101 Standard Cell FUJITSU
CS101 Series CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three types of core transistors with a d FUJITSU
CS1011-18IO1 Phase Control Thyristors IXYS
CS1011-22IO1 Phase Control Thyristors IXYS
CS1011-25IO1 Phase Control Thyristors IXYS
CS1018 HALL-EFFECT SWITCH MICRO-ELECTRONICS
CS101_07 Standard Cell FUJITSU
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