器件名称: EM567169BC-85
功能描述: 2M x 16 Pseudo SRAM
文件大小: 129.29KB 共14页
简 介:EtronTech
Features
Organized as 2M words by 16 bits Fast Cycle Time : 60/65/70/85ns Fast Page Cycle Time : 18/20/25/30ns Page Read Operation by 8 words Standby Current(ISB1): 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm
EM567169BC
2M x 16 Pseudo SRAM
Rev 0.6 Apr. 2004 Pad Assignment
1 2 3 4 5 6
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
VSS
DQ11
A17
A7
DQ3
VCC
Ordering Information
Part Number
EM567169BC-60/65/70/85
E
VCC
DQ12
NC
A16
DQ4
VSS
Speed(ns)
60/65/70/85
F
DQ14
DQ13
A14
A15
DQ5
DQ6
Pin Description
Symbol A0 – A20 DQ0 – DQ15 CE1# CE2 OE# WE# LB# UB# VCC/VCCQ VSS/VSSQ Function Address Inputs Data Inputs/Outputs Chip Enable Standby Mode Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground
G
DQ15
A19
A12
A13
WE#
DQ7
H
A18
A8
A9
A10
A11
A20
Overview
The EM567169 is a 32M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or CE2 is as……