器件名称: EM584161BA-85
功能描述: 256K x 16 Low Power SRAM
文件大小: 249.73KB 共13页
简 介:EtronTech
Features
Single power supply voltage of 1.65V to 1.95V Power down features using CE1# and CE2 Low power dissipation Data retention supply voltage: 0.9V to 1.95V Direct TTL compatibility for all input and output Wide operating temperature range: -40°C to 85°C Standby current @ VDD = 1.95 V
ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 A 80 A
D GND DQ11 A17 A7
EM584161
256K x 16 Low Power SRAM
Rev 2.0 Pin Configuration
48-Ball BGA (CSP), Top View
1 2 3 4 5 6
11/2003
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
DQ3
VDD
E
VDD
DQ12
NC
A16
DQ4
GN D
F
DQ14
DQ13
A14
A15
DQ5
DQ6
Ordering Information
Part Number
EM584161BC-70 EM584161BA-70 EM584161BA-70E EM584161BC-85 EM584161BA-85 EM584161BA-85E
Speed
70 ns 70 ns 70 ns 85 ns 85 ns 85 ns
ISB
8 A 8 A 80 A 8 A 8 A 80 A
Package
6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 8x10 BGA 8x10 BGA
G
DQ15
NC
A12
A13
WE#
DQ7
H
NC
A8
A9
A10
A11
NC
Pin Description
Symbol
A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC
Function
Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection
Overview
The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power. It……