器件名称: EM6A9320BI
功能描述: 4M x 32 DDR SDRAM
文件大小: 353.81KB 共17页
简 介:EtronTech
Revision History
Revision 0.9C(Mar., 2006)
Deleted confidential wording
EM6A9320BI
Revision 0.9B(Mar., 2006)
Revise the DC and AC characteristics
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Features
Fast clock rate: 250/200/166 MHz Differential Clock CK & CK# input
4Mx32 DDR SDRAM
EM6A9320BI
4M x 32 DDR SDRAM
(Rev 0.9C May/2006)
Overview
The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128 Mbits. It is internally configured as a quad 1M x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK#. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command. The EM6A9320 provides programmable Read or Write burst lengths of 2, 4, 8 and full page. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, EM6A9320 featur……
