器件名称:
MMBTH10-B-AE3-E-R
功能描述:
RF TRANSISTOR
文件大小:
196.21KB 共5页
简 介:
UNISONIC TECHNOLOGIES CO., LTD MMBTH10 RF TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. *Pb-free plating product number: MMBTH10L ORDERING INFORMATION Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel Order Number Normal Lead Free Plating MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R MARKING 3E www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-003,E MMBTH10 ABSOLUTE MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VCEO VEBO PC IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current NPN SILICON TRANSISTOR RATINGS 30 25 3 225 50 UNIT V V V mW mA Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) MIN 30 25 3 TYP MAX UNIT V V V mV mV nA nA pF MHz PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10μA Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA Collector Cut-off Current ICBO VCB=25V Emitter Cut-off Current ……