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MMBTH24LT1

器件名称: MMBTH24LT1
功能描述: VHF Mixer Transistors(NPN Silicon)
文件大小: 51.51KB 共2页
生产厂商: LRC
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简  介: LESHAN RADIO COMPANY, LTD. VHF Mixer Transistors NPN Silicon 3 COLLECTOR MMBTH24LT1 3 1 BASE 1 2 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current –Continuous Symbol V V V CEO CBO EBO CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Value 30 40 4.0 50 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTH24LT1 = M3A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 Adc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 Adc , I C = 0) Collector Cutoff Current ( V CB = 15Vdc , I E = 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO 30 40 4.0 — — — — — — — 50 Vdc Vdc Vdc nAdc — M34–1/2 LESHAN RADIO COMPANY, LTD. MMBTH24LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current……
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器件名 功能描述 生产厂商
MMBTH24LT1 VHF Mixer Transistors(NPN Silicon) LRC
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