器件名称:
TIP41CE3
功能描述:
6A NPN Epitaxial Planar Power Transistor
文件大小:
147.5KB 共3页
简 介:
CYStech Electronics Corp. 6A NPN Epitaxial Planar Power Transistor Spec. No. : C611E3 Issued Date : 2004.07.14 Revised Date : Page No. : 1/3 TIP41CE3 Description TIP41CE3 is designed for use in general purpose amplifier and switching applications. Low collector-emitter saturation voltage, VCE(sat) = 1.5V(max) @ IC = 6A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Features Symbol TIP41CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380s, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 100 100 5 6 10 (Note 1) 2 2 65 62.5 1.923 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C TIP41CE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol *BVCEO(SUS) ICEO ICES IEBO *VCE(sat) *VBE(on) *hFE *hFE fT Min. 100 30 15 3 Typ. Max. 700 400 1 1.5 2 75 Unit V A A mA V V MHz Spec. No. : C611E3 Issued Date : 2004.07.14 Revised Date : Page No. : 2/3 Test Conditions IC=30mA, IB=0 VCE=60V, IB=0 VCE=100V, VBE=0 VEB=5V, IC=0 IC=6A, IB=600mA VCE=4V, IC=6A VCE=4V, ……
