器件名称:
2N3905
功能描述:
Si-Epitaxial PlanarTransistors
文件大小:
99.03KB 共2页
简 介:
2N3905, 2N3906 PNP Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak collector current – Kollektorspitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCE0 - VEB0 Ptot - IC - ICM Tj TS Grenzwerte (TA = 25/C) 2N3905, 2N3906 40 V 40 V 5V 625 mW 1) 100 mA 200 mA 150/C - 55…+ 150/C Characteristics (Tj = 25/C) Min. Collector saturation volt. – Kollektor-Sttigungsspannung - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector cutoff current – Kollektorreststrom - VCE = 30 V, - VEB = 3 V Emitter cutoff current – Emitterreststrom - VCE = 30 V, - VEB = 3 V - IEBV – - ICEV – - VCEsat - VCEsat - VBEsat - VBEsat – – – – Kennwerte (Tj = 25/C) Typ. – – – – – – Max. 250 mV 400 mV 850 mV 950 mV 50 nA 50 nA Base saturation voltage – Basis-Sttigungsspannung 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig……
