器件名称:
BC847ALT3G
功能描述:
General Purpose Transistors
文件大小:
137.31KB 共13页
简 介:
BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO Value 65 45 30 Vdc 80 50 30 Vdc 6.0 6.0 5.0 100 mAdc Unit Vdc 3 1 2 Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 V ESD Rating Machine Model: >400 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 CollectorBase Voltage BC846 BC847, BC850 BC848, BC849 EmitterBase Voltage BC846 BC847, BC850 BC848, BC849 Collector Current Continuous VCBO SOT23 CASE 318 STYLE 6 VEBO MARKING DIAGRAM IC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX M G G 1 XX = Device Code M = Date Code* G = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, JunctiontoAmbient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, JunctiontoAmbient (Note 2) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW 1.8 RqJA PD 556 300 mW……
