器件名称:
5SNA0600G6501
功能描述:
IGBT Module
文件大小:
170.94KB 共9页
简 介:
VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Conditions VGE = 0 V, Tvj ≥ 25 °C Tc = 85 °C tp = 1 ms, Tc = 85 °C min max 6500 600 1200 Unit V A A V W A A A s V °C °C °C °C Nm -20 Tc = 25 °C, per switch (IGBT) 20 11900 600 1200 VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 4400 V, VCEM CHIP ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 6000 10 10200 125 125 125 125 6 10 3 Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) Mt1 Mt2 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 0600G650100 IGBT characteristic values……