器件名称: 5SNA1200E2501
功能描述: IGBT Module
文件大小: 204.43KB 共9页
简 介:VCE IC
= =
2500 V 1200 A
ABB HiPakTM IGBT Module
5SNA 1200E250100
Doc. No. 5SYA 1557-02 July 04
Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2)
1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg M1 M2 M3
Conditions VGE = 0 V Tc = 80 °C tp = 1 ms, Tc = 80 °C
min
max 2500 1200 2400
Unit V A A V W A A A s V °C °C °C °C Nm
-20 Tc = 25 °C, per switch (IGBT)
20 11000 1200 2400
VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 1900 V, VCEM CHIP ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
11000 10 5000 150 125 125 125 6 10 3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1200E250100
IGBT characterist……
