器件名称: 5SNA1600N1701
功能描述: IGBT Module
文件大小: 322.83KB 共9页
简 介:VCE IC
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1700 V 1600 A
ABB HiPakTM IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-01 Oct 06
Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2) 1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2
Conditions VGE = 0 V, Tvj ≥ 25 °C Tc = 80 °C tp = 1 ms, Tc = 80 °C
min
max 1700 1600 3200
Unit V A A V W A A A s V °C °C °C °C Nm
-20 Tc = 25 °C, per switch (IGBT)
20 9100 1600 3200
VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
13200 10 4000 150 125 125 125 6 10 3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1600N170100
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