器件名称:
BS616LV2025DI
功能描述:
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
文件大小:
253.36KB 共11页
简 介:
BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION BS616LV2025 Very low operation voltage : 4.5 ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV2025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/55 ns in 5V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616LV2025 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2025 is available in DICE form and 48-pin BGA type. PRODUCT FAMILY PRODUCT FAMILY BS616LV2025DC BS616LV2025AC BS616LV2025……