器件名称: BS616UV8021DC
功能描述: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
文件大小: 215.85KB 共12页
简 介:BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616UV8021
Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100ns (Max.) at Vcc=2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616UV8021 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616UV8021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV8021 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
PRODUCT FAMILY BS616UV8021DC BS616UV8021BC BS616……