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BC847A

器件名称: BC847A
功能描述: GENERAL PURPOSE TRANSISTOR NPN SILICON
文件大小: 79.39KB    共4页
生产厂商: ZOWIE
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简　　介:Zowie Technology Corporation General Purpose Transistor NPN Silicon 3 BASE 1 2 2 EMITTER COLLECTOR 3 BC847A,B,C 1 SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BC847A=1E; BC847B=1F; BC847C=1G ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=10mA ) Collector-Emitter Breakdowe Voltage ( IC=10 uA, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uA ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. V(BR)CEO 45 - - Vdc V(BR)CES 50 - - Vdc V(BR)CBO V(BR)EBO 50 6.0 - - Vdc Vdc ICBO - - 15 5.0 nAdc uAdc EV. : 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise no……
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