器件名称: BC848B
功能描述: GENERAL PURPOSE TRANSISTOR NPN SILICON
文件大小: 79.3KB 共4页
简 介:Zowie Technology Corporation General Purpose Transistor
NPN Silicon
3 BASE 1 2 2 EMITTER COLLECTOR 3
BC848A,B,C
1
SOT-23
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 30 30 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C
(1)
Symbol TA=25 C
o
Max. 225 1.8 556 300 2.4 417 -55 to +150
Unit mW mW / oC
o
PD R JA
Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature
(2)
C/W
TA=25 C
o
PD R JA TJ,TSTG
mW mW / oC
o
C/W o C
DEVICE MARKING BC848A=1J; BC848B=1K; BC848C=1L ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage ( IC=10mA ) Collector-Emitter Breakdowe Voltage ( IC=10 uA, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uA ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CEO
30
-
-
Vdc
V(BR)CES
30
-
-
Vdc
V(BR)CBO V(BR)EBO
30 5.0
-
-
Vdc Vdc
ICBO
-
-
15 5.0
nAdc uAdc
EV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise no……
