首页 | 嵌入式系统 | 显示技术 | 模拟IC/电源 | 元件与制造 | 其他IC/制程 | 消费类电子 | 无线/通信 | 汽车电子 | 工业控制 | 医疗电子 | 测试测量
首页> 分享下载> 模拟IC/电源> 115.NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages

115.NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages

资料介绍
NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages


NXP 30-, 20-, and 12-V
N- and P-channel MOSFETs
PMNseries in TSOP6
packages



Ultra-small TrenchMOS MOSFETs in a TSOP6
package and 94% lower RDS(ON) than SOT23

Combining our expertise in package miniaturization and advanced Trench technology, these
ultra-small TrenchMOS MOSFETs, housed in tiny TSOP6 packages, deliver an on resistance
94% lower than current SOT23 devices, and are an ideal choice for space- and power-critical
applications of all kinds.


Features and benets
标签: NXPMOSFET
115.NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages
本地下载

评论