器件名称:
BUZ20
功能描述:
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
文件大小:
42.14KB 共5页
简 介:
BUZ20 Semiconductor Data Sheet October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET Features 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.200 (BUZ20 eld effect transistor designed for applications such as SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V, High Input Impedance 0.200 Formerly developmental type TA17411. Majority Carrier Device Ohm, NOrdering Information Related Literature Channel - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ20 TO-220AB BUZ20 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN TOGATE 220AB) DRAIN (FLANGE) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998 BUZ20S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied BUZ20 100 100 12 48 ±20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain……
