器件名称:
BUZ21
功能描述:
19A, 100V, 0.100 Ohm, N-Channel Power MOSFET
文件大小:
46.52KB 共6页
简 介:
BUZ21 Semiconductor Data Sheet October 1998 File Number 2420.1 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET Features 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100 (BUZ21) eld effect transistor designed for applications such as SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds (19A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 100V, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.100 High Input Impedance Ohm, N- Formerly developmental type TA9854. Majority Carrier Device Channel Ordering Information Related Literature Power - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ21 TO-220AB BUZ21 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TO220AB) SOURCE /Creator DRAIN () GATE /DOCIN DRAIN (FLANGE) FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998 BUZ21 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied BUZ21 100 100 19 75 ±20 75 230 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ……
