器件名称:
BUZ45A
功能描述:
8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET
文件大小:
12.13KB 共1页
简 介:
BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.800 (BUZ45 eld effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching Nanosecond Switching Speeds (8.3A, transistors requiring high speed and low gate drive power. Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, High Input Impedance 0.800 Formerly developmental type TA17425. Majority Carrier Device Ohm, NOrdering Information Channel Symbol PART NUMBER PACKAGE BRAND Power BUZ45A TO-204AA BUZ45A MOSD NOTE: When ordering, use the entire part number. FET) /Author G () /KeyS words (Harris Semiconductor, N- Packaging Channel JEDEC TO-204AA Power MOSFET, DRAIN (FLANGE) TO204AA) /Creator () /DOCIN FO pdfSOURCE (PIN 2) GATE (PIN 1) mark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998 ……
