器件名称:
BUZ71A
功能描述:
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET
文件大小:
49.38KB 共6页
简 介:
BUZ71A Data Sheet June 1999 File Number 2419.2 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power eld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9770. Features 13A, 50V rDS(ON) = 0.120 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER BUZ71A PACKAGE TO-220AB BRAND BUZ71A NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-17 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999 BUZ71A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied BUZ71A 50 50 13 48 ±20 40 100 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . ……
