器件名称: D1211
功能描述: METAL GATE RF SILICON FET
文件大小: 16.22KB 共2页
简 介:TetraFET
D1211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE
VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM
Dim. A B C D E F G H J K L M N P
mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57
Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180
Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W 40V ±20V 10A –65 to 150°C 200°C
Prelim. 12/95
D1211UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source……
