器件名称:
D1222UK
功能描述:
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL
文件大小:
19.96KB 共2页
简 介:
TetraFET D1222UK METAL GATE RF SILICON FET MECHANICAL DATA A K D 5 4 B (2 pls) E C 1 2 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 12.5V – 175MHz PUSH–PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F O H J I M N SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2 HIGH GAIN – 10 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current* Storage Temperature Maximum Operating Junction Temp……