器件名称:
DD400S65K1
功能描述:
Dioden-Module
文件大小:
130.24KB 共6页
简 介:
Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Hchstzulssige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage tP = 1 ms Tvj=125°C Tvj=25°C Tvj=-40°C 6500 6300 5800 400 VCES V IF A IFRM 800 A VR = 0V, tp = 10ms, T Vj = 125°C I2t 87 k A2s RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values min. Durchlaspannung forward voltage Sperrstrom reverse current Rückstromspitze peak reverse recovery current IF = 400A, Tvj = 25°C IF = 400A, Tvj = 125°C VR = 6300V, Tvj = 25°C VR = 6500V, Tvj = 125°C IF = 400A, - diF/dt = 1400A/s VR = 3600V, Tvj = 25°C VR = 3600V, Tvj = 125°C Sperrverzgerungsladung recovered charge IF = 400A, - diF/dt = 1400A/s VR = 3600V, Tvj = 25°C VR = 3600V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 400A, - diF/dt = 1400A/s VR = 3600V, Tvj = 25°C VR = 3600V, Tvj = 125°C Modulinduktivitt stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm LsCE Erec 440 1050 25 mJ mJ nH Qr 360 700 C C IRM 540 660 A A IR VF 3,0 typ. 3,……
