器件名称:
FDS2572
功能描述:
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
文件大小:
273.85KB 共12页
简 介:
FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET General Description UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Applications DC/DC converters Telecom and Data-Com Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S 7 8 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V, RθJA = 50 oC/W) Continuous (TC = 100oC, VGS = 10V, RθJA = 50 oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 4.9 3.1 Figure 4 2.5 20 -55 to 150 A A A W mW/oC o Ratings 150 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds Thermal Resistance Junction to Case at steady state (NOTE1) (NOTE2) (NOTE2) 25 50 85 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking FDS2572 Device FDS2572 Reel Size 330mm Tape Width 12mm Quan……
