器件名称:
DP500P
功能描述:
PNP Silicon Transistor
文件大小:
53.1KB 共3页
简 介:
Semiconductor DP500P PNP Silicon Transistor Description Suitable for low voltage large current drivers Excellent hF E Linearity Complementary pair with DN500P Switching Application Ordering Information Type NO. DP500P Marking P5à : monthly code Package Code SOT-223 Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-7003-003 1 DP500P Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings -15 -12 -5 -1 1.1 150 -55~150 Unit V V V A W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) fT C ob Test Condition IC =-50 A, IE=0 IC =-1mA, IB=0 IE=-50 A, IC =0 VCB=-12V, IE=0 VEB=-5V, IC =0 VCE=-2V, IC =-500mA VCE=-2V, IC =-3A IC =-3A, IB=-150mA IC =-3A, IB=-150mA VCB=-5V, IC =-500mA VCB=-10V, IE=0, f=1MHz Min. -15 -12 -5 160 40 - Typ. 150 - Max. -0.1 -0.1 320 -0.5 -1.2 50 Unit V V V A A V V MHz pF KST-7003-003 2 DP500P Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 Ic - VB E Fig. 3 hFE -……
