器件名称:
1N5059
功能描述:
Silicon Mesa Rectifiers
文件大小:
43.43KB 共4页
简 介:
1N5059...1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type 1N5059 1N5060 1N5061 1N5062 Symbol VR =VRRM Value 200 400 600 800 50 2 0.8 –55...+175 20 Unit V V V V A A A °C mJ Peak forward surge current Average g forward current Junction and storage temperature range Max. pulse energy in avalanche mode, non repetitive (inductive load switch off) tp=10ms, half–sinewave RthJA=45K/W, Tamb=50°C RthJA=100K/W, Tamb=75°C IFSM IFAV IFAV Tj=Tstg ER I(BR)R=1A, indicutive load Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions lead length l = 10mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86000 Rev. 2, 24-Jun-98 www.vishay.de FaxBack +1-408-970-5600 1 (4) 1N5059...1N5062 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Test Conditions IF=1A IF=2.5A VR=VRRM VR=VRRM, Tj=100°C VR=VRRM, Tj=150°C IR=100mA Type Symbol VF VF IR IR IR V(BR)R V(BR)R V(BR)R V(BR)R trr CD Min Typ Max 1 1.15 1 10 100 1600 1600 1600 1600 4 Unit V V mA mA mA V V V V ms pF Reverse breakdown voltage g 1N5059 1N5060 1N5061 1N5062 225 450 6……
