器件名称:
1N5195UR
功能描述:
GENERAL PURPOSE SILICON DIODES
文件大小:
33.35KB 共2页
简 介:
AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25C to 150C 1.0mA/°C from 150C to 175C Forward Current: 650mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VRM TYPE V(pk) CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N5196UR 80 180 250 V(pk) 70 180 225 mA 200 200 200 VRWM IO IO TA = +150°C mA 50 50 50 I FSM TP=1/120 S TA=25C A 2 2 2 DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. FIGURE 1 DESIGN DATA TYPE VF @100mA V dc CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N5196UR 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 IR1 at VRWM IR2 at VRM TA=25C IR3 at VRWM TA = 150°C CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. nA dc 25 25 25 A 100 100 100 A dc 5 5 5 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FA……
