器件名称:
CHA2091
功能描述:
36-40GHz Low Noise Amplifier
文件大小:
191.44KB 共8页
简 介:
CHA2091 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad band performance 36-40GHz ■ 2.5dB noise figure, 36-40GHz ■ 14dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 45mA ■ 20dBm 3rd order intercept point ■ Chip size: 1,67 x 1,03 x 0.1mm Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 20 25 30 35 40 45 50 Frequency ( GHz ) 10 9 8 Noise Figure ( dB ) 7 6 5 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25° C Symbol NF G G Parameter Noise figure, 36-40GHz Gain Gain flatness 12 Min Typ 2.5 14 ± 0.5 ± 1.0 Max 4.0 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20917150 - 30 May 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2091 Electrical Characteristics Tamb = +25° C, Bias Conditions: Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point 36-40GHz Low Noise Amplifier Min 3……
