器件名称:
CHA2092b99F/00
功能描述:
18-32GHz Low Noise Amplifier
文件大小:
87.11KB 共6页
简 介:
CHA2092b 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing technique is implemented on chip to ease the circuit biasing. The circuit is manufactured with a P-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vds IN 8831 OUT Vgs1 Vgs2,3 Main Features ■ Broadband performances : 18-32GHz ■ 2.5dB Noise Figure ■ 10dBm output power ( -1dB gain comp. ) ■ 22dB ±1.0dB gain ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size : 1.67 X 0.97 X 0.10 mm Gain & NF ( dB ) 30 25 20 15 10 5 0 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G NF P1dB Id Small signal gain Noise figure (20-32GHz) Output power at 1dB gain compression Bias current 8 Parameter Operating frequency range Min 18 17 Typ 22 2.5 10 60 Max 32 Unit GHz dB 3.5 dB dBm 100 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20921233 21-August-01 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 ……
