器件名称:
CHA2093-99F/00
功能描述:
20-30GHz Low Noise Amplifier
文件大小:
97.51KB 共8页
简 介:
CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN Vd 50 25 OUT Vg 1 Vg 2 20 Gain ( dB ) 10 Noise Figure ( dB ) 9 8 7 6 5 4 3 2 1 0 10 15 20 25 30 35 40 Frequency ( GHz ) Main Features Broad band performance 20-30GHz 2.2dB noise figure, 20-30GHz 15dB gain, ± 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.67 x 1.03 x 0.1mm 18 16 14 12 10 8 6 4 2 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G G Parameter Noise figure, 20-30GHz Gain Gain flatness 13 Min Typ 2.2 15 ± 0.5 ± 1.0 Max 3.0 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20933279 - 06 Oct 03 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Electrical Characteristics Tamb = +25°C, Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point 20-30GHz Lo……
