器件名称:
CHA2093RBF/24
功能描述:
20-30GHz Low Noise Amplifier
文件大小:
186.34KB 共8页
简 介:
CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier. Main Features ■ Broad band performance: 20-30GHz ■ Gain = 14dB (typical) ■ Noise Figure 3.0dB (typical) ■ Return loss < -7dB ■ Low DC consumption < 50mA ■ SMD leadless package ■ Dimensions: 5.08 x 5.08 x 0.97 mm3 SMD Package Dimensions "Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1." Ref. : DSCHA2093RBF2057 -26-Feb.-02- 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093RBF Schematic 20-30GHz Low Noise Amplifier Typical Bias Conditions for an ambient Temperature of +25°C Symbol Vdd Vg1 & 2 I……
