器件名称:
CHA2094B
功能描述:
36-40GHz Low Noise High Gain Amplifier
文件大小:
111KB 共8页
简 介:
CHA2094b 36-40GHz Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT Vgs1&2 Vgs3 Main Features Gain & NF ( dB ) Broadband performances : 36-40GHz 3.0dB Noise Figure 21dB gain ±1.5dB gain flatness Low DC power consumption, 60mA @ 3.5V Chip size : 1.72 X 1.08 X 0.10 mm 24 20 16 12 8 4 0 34 Typical on wafer measurements : 35 36 37 38 39 40 41 42 Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB NF Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure Min 36 18 5 Typ Max 40 Unit GHz dB dBm 21 8 3.0 4.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20949312 – 08-Nov.-99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2094b Electrical Characteristics Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop G G Gsb Is P1dB VSWRin 36-40GHz Low Noise Amplifier Parameter Operating frequency range (1) Small signal ga……
