器件名称:
CHA2095A99F/00
功能描述:
36-40GHz Low Noise Very High Gain Amplifier
文件大小:
106KB 共7页
简 介:
CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. In Vd Vd Out Vg 1,2 Vg 3,4 Typical on wafer measurements : Broadband performances 3.5dB Noise Figure 26dB gain ±1.0dB gain flatness Low DC power consumption, 90mA @ 3.5V Chip size : 2.07 X 1.11 X 0.10 mm Gain & NF ( dB ) Main Features 30 25 20 15 10 5 0 30 35 40 Frequency (GHz) 45 50 Main Characteristics Tamb. = 25°C Symbol Fop G P1dB NF Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure Min 36 22 8 Typ Max 40 Unit GHz dB dBm 26 10 3.5 4.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20958147 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2095a Electrical Characteristics Tamb = +25°C, Vd= 3.5V Symbol Fop G G Gsb Is P1dB VSWRin 36-40GHz Low Noise Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (……
