器件名称:
CHA2098B
功能描述:
20-40GHz High Gain Buffer Amplifier
文件大小:
106.06KB 共8页
简 介:
CHA2098b 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a P-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 25 Vd1 Vd2,3 IN OUT Vg1 Vg2 Vg3 Typical on-wafer results : Main Features ■ Broadband performances : 20-40GHz ■ 16dBm output power ( 1dB gain comp. ) ■ 19dB ±1.5dB gain ■ Low DC power consumption, 150mA @ 3.5V ■ Chip size : 1.67 X 0.97 X 0.10 mm 15 5 -5 -15 -25 10 15 20 25 30 35 40 45 Frequency ( GHz ) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Small signal gain Output power at 1dB gain compression Bias current Parameter Operating frequency range Min 20 17 13 Typ 19 16 150 Max 40 Unit GHz dB dBm 200 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20981233 21- August-01 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2098b Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop G G Is P1db P03 VSWRin 20-40GHz……
