器件名称:
CR08AS
功能描述:
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
文件大小:
76.75KB 共6页
简 介:
MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 0.8 MIN 2 3 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 3 IT (AV) ........................................................................ 0.8A VDRM ..............................................................400V/600V IGT ......................................................................... 100 A APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC 1 SOT-89 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 (marked “AD”) 400 500 320 400 320 12 (marked “AF”) 600 720 480 600 480 3.9±0.3 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I 2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=51° CV2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 1.26 0.8 10 0.42 0.5 0.1 6 6 0.3 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C mg Peak gate power dissipation Average gate power dissipation ……
