器件名称:
1N5229B
功能描述:
Voltage regulator diodes
文件大小:
37.79KB 共7页
简 介:
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N5225B to 1N5267B Voltage regulator diodes Product specication Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specication Voltage regulator diodes FEATURES Total power dissipation: max. 500 mW Tolerance series: ±5% Working voltage range: nom. 3.0 to 75 V Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. k a MAM239 APPLICATIONS Low-power voltage stabilizers or voltage references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation tp = 100 s; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; lead length max.; note 1 Lead length 8 mm; note 2 PZSM non-repetitive peak reverse power dissipation tp = 100 s; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITI……
