器件名称:
FDN5618P
功能描述:
60V P-Channel Logic Level PowerTrench MOSFET
文件大小:
385.09KB 共8页
简 介:
FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features –1.25 A, –60 V. RDS(ON) = 0.170 @ VGS = –10 V RDS(ON) = 0.230 @ VGS = –4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) Applications DC-DC converters Load switch Power management D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed PD TJ, TSTG Maximum Power Dissipation Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –1.25 –10 0.5 0.46 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 618 Device FDN5618P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDN5618P Rev B(W) FDN5618P Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Lea……
