器件名称:
FDS2670_01
功能描述:
200V N-Channel PowerTrench MOSFET
文件大小:
107.56KB 共6页
简 介:
FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1a) Units V V A W 3.0 20 2.5 1.2 1.0 3.2 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) dv/dt TJ, TSTG Peak Diode Recovery dv/dt (Note 3) V/ns °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS2670 Device FDS2670 Re……
