器件名称:
FDS3170N7
功能描述:
100V N-Channel PowerTrench MOSFET
文件大小:
208.9KB 共6页
简 介:
FDS3170N7 May 2003 FDS3170N7 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 6.7 A, 100 V. RDS(ON) = 26 m @ VGS = 10 V RDS(ON) = 28 m @ VGS = 6.0 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 ± 20 (Note 1a) Units V V A W °C 6.7 60 3.0 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3170N7 Device FDS3170N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS3170N7 Rev C1(W) FDS3170N7 El……
