器件名称:
FDS3570
功能描述:
80V N-Channel PowerTrench
文件大小:
250.58KB 共8页
简 介:
FDS3570 May 1999 PRELIMINARY FDS3570 80V N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features 9 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V RDS(ON) = 0.022 @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 80 ±20 (Note 1a) Units V V A W 9 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3570 Device FDS3570 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDS3570 Rev. B FDS3570 Electrical Characteristics Symbol BVDSS……