器件名称:
FDS3670
功能描述:
100V N-Channel PowerTrench
文件大小:
204.16KB 共8页
简 介:
FDS3670 January 2000 PRELIMINARY FDS3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V RDS(ON) = 0.033 @ VGS = 6 V. Low gate charge (57 nC typical). Fast switching speed High performance trench technology for extremely low RDS(ON) . High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (Note 1a) Units V V A W 6.3 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3670 1999 Fairchild Semiconductor Corporation Device FDS3670 Reel Si……