器件名称:
FDS3690
功能描述:
100V N-Channel PowerTrench MOSFET
文件大小:
208.06KB 共8页
简 介:
FDS3690 February 2000 PRELIMINARY FDS3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 5 A, 100 V. RDS(ON) = 0.059 @ VGS = 10 V RDS(ON) = 0.066 @ VGS = 6 V Fast switching speed. Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications DC/DC converter Motor Driver D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ± 20 (Note 1a) Units V V A W 5 40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3690 Device FDS3690 Reel Size 13’’ Tape width ……
