器件名称:
FDS4070N3
功能描述:
40V N-Channel PowerTrench MOSFET
文件大小:
173.75KB 共7页
简 介:
FDS4070N3 February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 40 ± 20 (Note 1a) Units V V A W °C 15.3 60 3.0 –55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS4070N3 Device FDS4070N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS4070N3 Rev B2 (W) FDS4070N3 Electrical Characteristics Symbol EAS IAS BV……