器件名称:
FDS4072N7
功能描述:
40V N-Channel PowerTrench MOSFET
文件大小:
179.39KB 共7页
简 介:
FDS4072N7 February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V RDS(ON) = 9 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 40 ± 12 (Note 1a) Units V V A W °C 12.4 60 3.0 1.5 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 40 0.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4072N7 Device FDS4072N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS4072N7 Rev C2 (W) FDS4072N7 Electrical Characteristics Symbol……
