器件名称:
FDS4080N3
功能描述:
40V N-Channel FLMP PowerTrench MOSFET
文件大小:
174.19KB 共7页
简 介:
FDS4080N3 February 2004 FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 13 A, 40 V RDS(ON) = 10.5 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching (Qg = 30 nC ) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter NC D NC NC D NC D D 5 6 Bottom-side Drain Contact 4 3 2 1 D Bottomless FLMP SO-8 SO-8 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 40 ± 20 (Note 1a) Units V V A W °C 13 60 3.0 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 40 0.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4080N3 Device FDS4080N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconducto……
