器件名称:
FDS4080N7
功能描述:
40V N-Channel FLMP PowerTrench MOSFET
文件大小:
262.85KB 共7页
简 介:
FDS4080N7 May 2003 FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 13 A, 40 V RDS(ON) = 10 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching (Qg = 30 nC ) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 40 ± 20 (Note 1a) Units V V A W °C 13 60 3.9 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 38 1 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4080N7 Device FDS4080N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS4080N7 Rev C1 (W) FDS4080N7 Electrical Characteristics Symbol EAS IAS……
