器件名称:
FDS4410A
功能描述:
Single N-Channel, Logic-Level, PowerTrench MOSFET
文件大小:
112.08KB 共5页
简 介:
FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features ■ 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V RDS(ON) = 20 m @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D D D D 5 6 4 3 2 1 SO-8 Pin 1 S S S G 7 8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 ±20 10 50 2.5 1.0 –55 to +150 Units V V A W °C °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) Thermal Resistance, Junction-to-Case (Note 1) 50 125 25 Package Marking and Ordering Information Device Marking FDS4410A Device FDS4410A Reel Size 13" Tape width 12mm Quantity 2500 units 2005 Fairchild Semiconductor Corporation 1 www.f……
