器件名称:
FDS4501H
功能描述:
Complementary PowerTrench Half-Bridge MOSFET
文件大小:
1390.46KB 共8页
简 介:
FDS4501H May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features Q1: N-Channel 9.3A, 30V RDS(on) = 18 m @ V GS = 10V RDS(on) = 23 m @ V GS = 4.5V Q2: P-Channel –5.6A, –20V RDS(on) = 46 m @ V GS = –4.5V RDS(on) = 63 m @ V GS = –2.5V Applications DC/DC converter Power management Load switch Battery protection D D D D D D DD Q2 5 6 Q1 4 3 2 1 SO-8 SO-8 S S S G 7 8 2 G S2 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Parameter - Continuous - Pulsed Power Dissipation for Single Operation G S1 1 Q1 30 (Note 1a) Q2 –20 ±8 –5.6 –20 2.5 1.2 1 –55 to +150 Units V V A W ±20 9.3 20 (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4501H Device FDS4501H Reel Size 13” Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W) FDS4501H Electrical Characteristics Symbol BV DSS BV DSS TJ IDSS IGSS TA ……
