器件名称:
FDS4672A_07
功能描述:
40V N-Channel PowerTrench
文件大小:
454.79KB 共6页
简 介:
FDS4672A February 2007 FDS4672A 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. tm Features 11 A, 40 V. RDS(ON) = 13 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (35 nC typical) High power and current handling capability RoHS Compliant Applications DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID EAS PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Single Pulse Avalanche Energy TA=25 C unless otherwise noted o Parameter Ratings 40 ±12 (Note 1a) Units V V A mJ W 11 50 181 2.5 1.4 1.2 -55 to +175 (Note 3) (Note 1a) (Note 1b) (Note 1c) Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4672A Device FDS4672A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2007 Fairchild Semiconductor Corporation FDS4672A Rev C1 (W) FDS4672A Electrical Characteristics Symbol BVDSS ΔBVDSS ΔTJ IDSS IGSSF IGSSR TA = 25°C un……
